Dielectric response of filled high temperature vulcanization silicone rubber

摘要

The dielectric response of three kinds of filled high temperature vulcanization (HTV)\udsilicone rubber – SiO2 based nanocomposite with different alumina tri-hydrate (ATH)\udmicro-filler contents are investigated over a wide range of frequency and temperature.\udThe results are analyzed in terms of the many-body Dissado-Hill dielectric response\udtheory. In all three kinds of silicone rubber, a quasi-DC (QDC) process, a Dissado-Hill\udloss peak process and a diffusion process are observed. Specifically, the ATH filler\udcontributes a QDC electrical transport/hopping process, which at higher temperatures\udcauses the formation of a diffusion layer at the electrodes. The nano-SiO2 particles\udcombined with rubber matrix give a Dissado-Hill loss peak dielectric relaxation. These\udtwo dispersion processes are shown to be associated with the interior interfaces of filled\udHTV silicone rubber. The effects of ATH filler content and temperature on the dielectric\udresponse are also analyzed in depth.